TeraSense series of terahertz sources (IMPATT diodes) are silicon double drift diodes with a 0.6 um transit region, mounted on copper heat sink. The layers in double-drift diodes are: a heavily doped (p+)-region, a moderately doped pregion, a moderately doped n-region, and a heavily doped (n+)-region. The (p+) — and (n+) — regions allow ohmic electrical contacts to be made to the external circuit. The device relies on negative resistance to generate and sustain an oscillation.
TeraSense is now offering its upgraded version of terahertz generators. The upgraded thz generator is outfitted with a protective isolator, which significantly improves output power stability. From now on you can order the THz source with either rigidly fixed horn antenna or WR- flange of your choice. Typical output rfpower of the generator with optimized frequency at 100 GHz can reach up to 100 mW. This allows them to be used together with multipliers to reach frequencies in the far terahertz spectral range.
In addition, TeraSense sources feature ergonomic design and ease to use. The company can optionally supply THz generator with attenuator and switch
THz source
100 GHz
~ 80 / 400 mW output rfpowerConical horn antenna /
Flange type output
Protective Isolator
TTL Modulation
THz source
140 GHz
~ 30 / 100 mW output rfpowerConical horn antenna /
Flange type output
Protective Isolator
TTL Modulation
THz source
180 GHz
~ 10 mW output rfpowerConical horn antenna /
Flange type output
TTL Modulation
THz source
300 GHz
~ 10 mW output rfpowerConical horn antenna /
Flange type output
TTL Modulation
Download attachments:
- Terahertz-Source-Datasheet.pdf (165 Downloads)